Advances in resistive switching memory: comprehensive insights into ECM mechanisms through TEM observations and analysis
The complex nature of ion migration at the nanoscale and the associated redox reaction in resistive switching requires a thorough understanding through transmission electron microscopy (TEM).
Authors
- Cheon Woo Moon (ORCID: https://orcid.org/0000-0001-8819-9613)
- Woonbae Sohn
- Jung Hun Lee (ORCID: https://orcid.org/0000-0001-5504-4033)
- Hyo‐Jung Kim (ORCID: https://orcid.org/0000-0002-2027-6341)
- Hyerim Kim (ORCID: https://orcid.org/0000-0002-3751-8087)
- Young-Seok Shim (ORCID: https://orcid.org/0000-0002-1807-3932)
Institutions
- Northwestern University (US)
- Soonchunhyang University (KR)
- Sejong University (KR)
- Korea University of Technology and Education (KR)
- Korea Basic Science Institute (KR)
- Sungkyunkwan University (KR)
Publication Details
- Journal
- Materials Advances
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ma00337g
- Citations
- 11
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 8.03
Funders
- National Research Foundation
- Sejong University
- Korea Basic Science Institute
- National Research Foundation of Korea
- Ministry of Science and ICT, South Korea