Influence of temperature and carrier density on the band-gap of highly excited monolayer MoS₂

The Band-Gap Renormalization (BGR) of electron–hole pairs in quantum wells (QWs) was calculated relative to valley spin-polarization, temperature, and carrier density within the Keldysh–Coulomb potential framework. The BGR was determined using the semiconductor literature, where the electron self-energy was computed within the Hartree–Fock approximation. Our findings for monolayer MoS 2 revealed a significant disparity in the BGR between the limits low-temperature and high-temperature regimes, accounting for many-body interactions. The BGR strongly depends on the temperature and carrier density, consistent with recent different theory results. These results illuminate the carrier density and temperature-dependent valley spin-polarization characteristics of the BGR, emphasizing the necessity of accounting for both doping and excitation densities in understanding semiconductor properties.