Silicon Carbide based Dielectric Modulated Triple Metal Gate All Around MOSFET (TMGAA) for Enhanced Electrical characteristics and Analog performance

This manuscript outlines the design and performance analysis of a novel Silicon Carbide (4H-SiC)-based Dielectric-Modulated-Triple-Metal-Gate-All-Around (TMGAA) MOSFET using the ATLAS 3-D structure simulator. A gate-stack incorporating (high-k) dielectric materials, specifically Hafnium Oxide, HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and Aluminum Oxide, Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>, has been utilized as the gate dielectric. The proposed TMGAA structure enhances electrostatic control, reduces short-channel effects, and improves charge carrier mobility, leading to superior analog performance. To ensure a fair comparison, the performance characteristics of TMGAA MOSFET have been equated with the structure functionality of the Double-Metal-Gate-All-Around (DMGAA) MOSFET focusing on key analog performance metrics such as drain current, I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</inf>, transconductance, g<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf>, and output conductance, g<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</inf>.