Corner Pockets in Dual Source Vertical TFET: A Key Strategy for Enhanced DC and RF Performance

In this work, we introduce a new method focused at improving the performance and execution of Dual Source Vertical Tunnel Field-Effect Transistors (TFETs). A corner source pocket design for the TFET architecture is proposed, which effectively enhances both DC and RF characteristics. By adjusting the geometry of the carrier transport mechanisms, corner pockets increase tunneling efficiency and reduce leakage currents, leading to improvements in subthreshold swing (SS) and on-current (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>).The proposed structure also shows superior RF performance metrics, namely increased transconductance and reduced parasitic capacitances. The benefits of this novel design are supported by comprehensive simulations and analyses, indicating its potential as a significant advancement for future low-power electronic applications.