Design and Characterization of High-Performance Heterojunction Vertical TFET-Based Biosensors With Trench Gate Structure for Higher Sensitivity

With the ever-growing demand for high-performance biosensors with better sensitivity, TFET-based biosensors are becoming a promising technology in various biomedical and healthcare applications. This study focuses on the design, analysis of characteristics, and performance comparison between a high-performance SiGe/AlGaAs/Si Hetero-junction Dual Source T-shaped Gate Field-plate Vertical TFET (DSTSGFPV-TFET) based structure and a high-performance SiGe/Si Hetero-junction Single-source Trench-gate Vertical TFET (SSTGV-TFET) based structure, tailored for biosensing applications. Compared to some other recently reported TFET-based biosensor designs, the DSTSGFPV structure shows a better On-to-Off device current ratio sensitivity, while the SSTGV structure exhibits a superior threshold voltage sensitivity. All in all, in terms of sensitivity metrics, both the DSTSGFPV and SSTGV TFET structures proposed in this work are highly promising candidates for advanced biosensing applications.