Impact of Sensing Performance on Junction Less Stack Gate All-Around Metal Oxide Semiconductor Field Effect Transistor for Biosensing Application

High-performance Junctionless Stack Gate All Around Metal Oxide Semiconductor Effect Transistor (JLS-GAA-MOSFET) biosensor is proposed for the detection of neutral and charged biomolecules. An InGaAs/InP hetero channel dual material stack gate is implemented for the identification of different biomolecules using a 2D ATLAS device simulator. The JLS-GAA-MOSFET biosensor is designed to analyze the various sensitivity parameters by taking both neutral biomolecules like (Uricase = 1,54, streptavidin = 2.1, APTES = 3.57, Ferro Chrome C = 4.7 and Keratin = 8) and charge biomolecules. The sensing behavior of the proposed biosensor is measured by parameter matrix like electrostatic potential, drain current, current, and sensitivity. The JLS-GAA-MOSFET biosensor achieves an optimum value of drain current 0.11mA, and current and threshold voltage sensitivity are 1.69 and 0.455 respectively for Keratin.