Enhancement of switching current ratio with workfunction modulated SiGe Vertical TFET
In this work, a new SiGe WFM V-TFET (Workfunction modulated vertical tunnel field effect transistor with SiGe source) is proposed to improve the I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>/I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf> ratio and other DC parameters. The study reveals a remarkable rise in transconductance with workfunction modulation, at both the gates. When compared to a conventional Vertical Tunnel Field Effect Transistor (V-TFET), the SiGe WFM V-TFET shows improvements in drain current, surface potential, electric field, energy bandgap, and transconductance. Due to these advancements, this device is allowed to be utilized in high-speed, low-power applications.
Authors
- Guru Prasad Mishra (ORCID: https://orcid.org/0000-0002-0984-8310)
- Vishalli Ghai (ORCID: https://orcid.org/0000-0003-1674-0583)
- Anubha Jaiswal (ORCID: https://orcid.org/0009-0000-7458-2902)
- Anita Vaishnaw
- Bhange Gayatri Gajananrao
Institutions
- National Institute of Technology Raipur (IN)
Publication Details
- Published
- 2025-04-05
- DOI
- https://doi.org/10.1109/devic63749.2025.11012214
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00