Comparative Analysis of Dual Metal Gate-Split Source and Bilateral Tunnel Field Effect Transistor

This work introduces a novel Dual Metal Gate-Split Source-Bilateral Tunnel Field-Effect Transistor (DMG-SS-BTFET) designed for ultra-low-power applications. The split-source architecture, integrated with dual-metal gates, enhances the tunneling efficiency and ensures superior electrostatic control over the channel. The proposed DMG-SS-BTFET exhibits significant improvements in I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>, I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf>, SS, and the I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>/I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf> ratio compared to conventional TFETs. Its performance is evaluated by comparing the split-source design with a bilateral architecture (DMG-BTFET). Additionally, an RF analysis at a 1 GHz frequency highlights its suitability for high-speed operations. These features position the DMG-SS-BTFET as an advanced candidate for future applications.