Performance assessment of Charge Plasma Triple Metal Gate Junctionless Vertical TFET-based Biosensor using Gate Engineering technique

The detection of biomolecules using nanoscale devices presents significant challenges due to fabrication complexities and sensitivity limitations. This study suggests a unique Charge Plasma with junctionless Triple Metal Gate Vertical Tunnel Field-Effect Transistor (CP-TMG-JLVTFET) biosensor as a solution to these problems, leveraging gate engineering and dielectric modulation techniques. The biosensor is designed for label-free detection of both neutral and charged biomolecules. Comprehensive simulations using the SILVACO Atlas 2D simulator were performed to evaluate device performance, focusing on critical parameters such as drain current, electric field, and subthreshold swing (SS). Key findings indicate that the proposed device achieves a high sensitivity of 7.33×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> for a dielectric constant of k=12, with a significant improvement in the Ion/Ioff ratio and a steep subthreshold swing of 14.5 mV/decade. These results demonstrate the superior sensitivity and detection capabilities of the CP-TMG-JLVTFET biosensor, making it a promising platform for advanced biomolecule detection.