Comparative Analysis of Electrical Parameters in GaN-based GAAFETs

Gallium Nitride (GaN)-based Gate Stack (GS) Gate-All-Around Field Effect Transistors (GAAFETs) are emerging as highly promising solutions for future energy-efficient electronic devices due to their remarkable material characteristics, including high electron mobility, a wide bandgap, and excellent thermal stability. This research emphasizes the evaluation of DC performance metrics for GaN-based GAAFETs, incorporating high-k dielectric spacers and gate underlap techniques. The DC study analyses key parameters such as On-Current, leakage current, switching speed, and subthreshold swing (SS). The results highlight the advantages of employing high-k spacers and underlap designs in GaN-based GAAFETs for low-power, high-performance applications in sustainable and energy-efficient electronics, especially for IoT and 5G systems. The integration of gate underlap with high-k dielectric materials in the spacer region effectively mitigates short-channel effects (SCEs). These findings demonstrate that the proposed design offers notable enhancements in device performance, making it an excellent candidate for next-generation digital and RF applications.