Parametric Evaluation of MOSFET based Biosensor Accounting Non-Ideal Hybridization Dynamics

This article tries to analytically investigate the architecture of a Label free Dielectric Modulated Triple Material Stacked Surrounding Gate Junctionless Metal Oxide Semiconductor Field Effect Transistor (DMTMSSGJL-MOSFET) based Biosensor by incorporating various non-ideal conditions like steric hindrance issues so as to realize and embrace the practicality of the model. For structural formation, a stacked surrounding gate-oxide alongside with the employment of gate work-function engineering and a symmetrical junctionless doping profile is deployed for the proposed device. The thought process behind this article is to develop quantitative formulation of various non-ideal issues in association with steric hindrance problem and to measure the underlying biometric performance parameter of the device in terms of threshold voltage sensitivity (SVTH) for both charged and neutral biomolecules. Furthermore, a comprehensive analysis of different non-uniform patterns of biomolecules inside the nanogap cavities are analyzed to replicate the reduced interaction likelihood of various biomolecules.