Memristor SPICE Model with Enhanced Nonlinear Ion Drift for Modern Electronics

Memristor is a groundbreaking advancement in the field of VLSI. While MOSFETs remain crucial in electronic systems, memristors offer a promising avenue for developing advanced circuits with enhanced outputs. This research explores numerous existing memristor models and introduces a novel approach incorporating a new window function to address the limitations of the previous models. Specifically, a Model for Nonlinear Ion Drift is proposed, featuring an improved window function that enables its use as a SPICE model for computer simulations. This allows for in-depth analysis of memristor behavior. The proposed model outperforms existing models in terms of output. The study primarily focuses on these parameters to enhance efficiency. Notably, the proposed model demonstrates up to a twofold improvement in current compared to other models. The findings highlight the effectiveness of this model in facilitating accurate SPICE simulations for memristor analysis, ensuring reliable integration into electronic circuits.