Investigation of the impacts of different parameters of Buffer Carbon Trapping in AlGaN/GaN HEMTs

Advanced semiconductors, such as gallium nitride (GaN) compounds, are revolutionizing the field of power electronics. GaN-based materials, specifically GaN HEMTs, exhibit exceptional efficiency in high-frequency and high-power usage due to their unique characteristics. However, despite their potential, GaN components face significant challenges such as deterioration and power loss caused by electrical charge trapping, which restricts their widespread application. Understanding the origins and influence of these traps on device performance remains a critical area of research. This study presents a simulation-based investigation of the effects of carbon-induced traps in AlGaN/GaN HEMTs. The simulation model, implemented using TCAD software, simplifies certain aspects of the device while incorporating essential parameters such as background doping, trap density, activation energy, and capture cross-section to realistically mimic the behavior of carbon traps. The results provide insights into the detrimental impacts of these traps on device performance and suggest strategies to mitigate their effects, contributing to the optimization of GaN HEMTs for high-power and high-frequency applications.