An Active Crosstalk Suppression Gate Driver Circuit for Si/SiC Hybrid Switch

The hybrid switch (HyS), composed of parallel-connected Si IGBT and SiC MOSFET, has gained increasing attention in recent years due to its high efficiency and low cost. However, the crosstalk of HyS during operation, resulting from the unique behavior and differences in device characteristics, significantly reduces system reliability. To address the crosstalk issue, this work analyzes the crosstalk effects in HyS and establishes a crosstalk model for HyS. A gate driver circuit is designed to suppress crosstalk in HyS, with its operating principles elaborated in detail. The driver circuit simplifies hardware design while effectively addressing the crosstalk issue in HyS. LTSPICE simulations and double-pulse test (DPT) results indicate that the designed driver reduces crosstalk voltage spikes by 13.2 V (93.0%) and 0.4 V (28.6%), respectively, compared with the manufacturer’s recommended and conventional drivers. The current spike is reduced by 5.6 A (10.8%) and 4.9 A (9.6%), respectively. The turn-off loss is reduced by 112 μJ (24.3%) and 58 μJ (14.3%), respectively, verifying its effectiveness. This study provides critical technical support for enhancing the reliability and practicality of HyS, offering broad engineering application potential.