Study on Pressure Sensing Potential of an IGZO Field-Effect Transistor

This paper investigates the performance improvement and pressure sensing potential of a field-effect transistor (FET) based on amorphous indium-gallium-zinc oxide (IGZO) material. The study demonstrates that an oxygen-free annealing atmosphere can enhance the electrical properties of IGZO material, thereby improving the device's performance. In addition, an IGZO FET with a top-gate structure is designed, and its potential application for pressure sensing is analyzed. By utilizing microsphere spacers, as the spacing elements, we streamlined the fabrication process for top-gate field-effect transistor production. It is found that when the thickness of the air insulation layer is reduced from 4 µm to 2 µm the change in drain-source current is 23.6 nA, with an equivalent sensitivity of 23.5 nA/µm while the thickness of the air insulation layer is closed to 2µm, indicating its potential for pressure sensing. This work provides strong support for the development of integrated pressure sensors compatible with conventional semiconductor processes.