Investigation Temperature variation on DC and Analog performance of Gate Stack GNRFET using DFT-based atomic scale Modelling

This study investigates the impact of temperature on the performance of a Gate-Stacked Graphene Nanoribbon Field-Effect Transistor (GS-GNRFET) using Density Functional Theory (DFT). The Poisson equation is solved using the Semi Empirical (SE) calculator with the Non-Equilibrium Green's Function (NEGF) method. The proposed GS-GNRFET demonstrates a 30% increase in I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf>, 72% reduction in I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf>, and 12% enhancement in transconductance (g<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf>), with a higher transmission coefficient than conventional GNRFET. Temperature analysis of the proposed device reveals a 48% decrease in I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf>, 98% reduction in I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf>/I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf>, and 138 times increase in DIBL from 250 K to 350 K, limiting its use in high-temperature environments. However, these findings make the proposed device suitable for low-power computing, cryogenic electronics, and biomedical sensors.