Exploring the Analog, RF, and Linearity Performance of Nanosheet FETs under Temperature Variations

This study investigates the impact of temperature on nanosheet FET performance using a well-established device simulation framework. We analyze DC characteristics, analog/RF figures of merit, and linearity across a range of operating temperatures. While the switching performance degrades at higher temperatures, the drive current increases due to the reduced barrier height. Interestingly, peak transconductance and transition frequency remain largely unaffected by temperature. However, increased output conductance at elevated temperatures leads to a degradation in the maximum oscillation frequency. Conversely, the device’s linearity performance improves with increasing temperature.