A Raised Source Drain DG JLFET for Electric Vehicles: Enhancing Performance and Efficiency

As the transportation sector moves towards electrification, the development of power electronic components becomes increasingly important, with MOSFETs playing a crucial role in electric and hybrid vehicles (EHVs). Raised Source Drain Double Gate Junctionless Field Effect Transistor (RSD-DG JLFET) simulation study is presented here. The study compares the electrical properties of an RSD-DG JLFET with PMOSFET and JLFET. A 2D device simulation platform is used to compare the subthreshold swing, threshold voltage, and Ion/Ioff ratio of the proposed structure, PMOSFET, and JLFET. The simulation results indicate that the RSD-DG JLFET offers significant improvements in efficiency and reliability for EV applications.