Semi-SJ high-k IGBT: An Effective Approach to Increase Breakdown Voltage

In this paper, we introduce an innovative semi-superjunction (semi-SJ) high-k IGBT that showcases remarkable advancements in Forward breakdown voltage (BVF) compared to traditional semi-SJ IGBTs. Our comprehensive research reveals a substantial enhancement of 23.07% in breakdown voltage, a significant leap that underscores the efficacy of our design. This improvement stems from the meticulous optimization of redistributed electric field lines, which plays a critical role in achieving superior electrical performance. The implications of this work open new avenues for the development of high-efficiency power electronics, paving the way for more robust and reliable devices in various applications.