Effect of Interface Trap Charges on Improved Junctionless Nanowire Field Effect Transistor

This paper investigates the reliability issues caused by Interface Trap Charges (ITCs) in the Improved Junctionless Nanowire Field Effect Transistor (Improved-JL-NWFET). These fixed localized charges formed at the channel-oxide interface during fabrication due to radiation, stress, process variations, and hot carrier damage, significantly impacting device characteristics. This paper analyzes their effects on key performance parameters and compares results with a conventional JL-NWFET. Both donor (+ve) and acceptor (−ve) ITCs in the channel/gate oxide interface region are examined for their influence on electrical and analog parameters. The results indicate that Improved-JL-NWFET exhibits more immunity against degradation in electrical and analog parameters compared to its conventional counterpart devices in the presence of positive and negative ITCs.