Design of a Midinfrared All- Dielectric Metasurface with Quasi-Bound States in the Continuum for Refractive Index Sensing

We design and analyze a novel all-dielectric meta-surface refractive index sensor that shows a high sensing performance based on the excitation of quasi-bound states in the continuum (quasi-BIC), which enables a high sensitivity and FOM in the midinfrared with remarkable values of 2200 nm/RIU and 7624.1, respectively.

Authors

Hongzhou Yan (ORCID: https://orcid.org/0000-0003-2820-1368)
Changying Zhao (ORCID: https://orcid.org/0000-0003-0023-0378)
Boxiang Wang (ORCID: https://orcid.org/0000-0002-8034-1504)
Shenghao Jin
Wentao Zhai (ORCID: https://orcid.org/0000-0003-4287-4075)
Jianming Xu

Institutions

Shanghai Jiao Tong University (CN)
Chinese Academy of Sciences (CN)
Shanghai Micro Satellite Engineering Center (CN)
Shanghai Institute of Microsystem and Information Technology (CN)

Publication Details

Published: 2025-03-21
DOI: https://doi.org/10.1109/icsi64877.2025.11009580
Primary Topic: Metamaterials and Metasurfaces Applications
Type: article
Field-Weighted Citation Impact: 0.00

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article

Design of a Midinfrared All- Dielectric Metasurface with Quasi-Bound States in the Continuum for Refractive Index Sensing

Hongzhou Yan, Changying Zhao, Boxiang Wang, Shenghao Jin et al.

Mar 21, 2025

Metamaterials and Metasurfaces Applications

article

Design of a Midinfrared All- Dielectric Metasurface with Quasi-Bound States in the Continuum for Refractive Index Sensing

Hongzhou Yan, Changying Zhao, Boxiang Wang, Shenghao Jin, Wentao Zhai, Jianming Xu

March 21, 2025article en

Abstract

We design and analyze a novel all-dielectric meta-surface refractive index sensor that shows a high sensing performance based on the excitation of quasi-bound states in the continuum (quasi-BIC), which enables a high sensitivity and FOM in the midinfrared with remarkable values of 2200 nm/RIU and 7624.1, respectively.

Shanghai Jiao Tong University (CN), Chinese Academy of Sciences (CN), Shanghai Micro Satellite Engineering Center (CN), Shanghai Institute of Microsystem and Information Technology (CN)

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