Design of Dual Gate Mixer with Ambipolar Virtual Source Graphene Field Effect Transistor

A single-ended resistive mixer based on the ambipolar virtual source Graphene Field Effect Transistor (GFET) with 650 nm technology is designed and analyzed in this article. The dual gate GFET mixer is biased at the gate terminal with different gate voltages so that the intermodulation distortion (IMD) generated by the GFET devices is combined. Due to the different biased conditions of the GFET devices, the linearity of the mixer is improved. The mixer is designed for the 2.4 GHz ISM band, which is unlicensed to 11 MHz of intermediate frequency with a local oscillator frequency of 3.89 GHz for down conversion. The proposed GFET mixer shows a conversion loss of 24.77dB at the 1 dB compression point, and the third order intermodulation is calculated as 28.52 dBc.