Terahertz IMPATTs Based on Wide Band Gap Semiconductor Transit Time Sources

The probability of wide band gap type-IIb diamond as the foundation for double-drift region (DDR) impact avalanche transit time (IMPATT) devices that operate at THz frequencies has been investigated. In this study, a large-signal (L-S) simulation model is employed. According to simulation studies, the DDR 3C-SiC IMPATTs excel in delivering output power between 140 GHz and 1.0 THz than the diamond IMPATTs. On the other hand, the diamond IMPATT source is a better choice for generating RF power at 94 GHz because it can generate more power at lower millimeter-wave frequencies. At mm-wave and THz frequencies, however, IMPATT sources based on both 3C-SiC and diamond are far more potent than Si IMPATTs. Thereby a co-relative study has been presented for DDR IMPATT based on Si, 3C-SiC, and type-IIb diamond, which shows the superiority of diamond IMPATT, in terms of power and DC to RF conversion efficiency at mm-wave and THz domain.