Enhancing the Efficiency of (CH<sub>3</sub>NH<sub>3</sub>)<sub>2</sub>CuCl<sub>4</sub>-based Perovskite Solar Cells by Selecting a Suitable Electron Transport Layer

The compound (CH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>NH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>)<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>CuCl<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> demonstrates exceptional electrical and optical characteristics, positioning it as a viable candidate for solar cell device, with the potential to enhance efficiency and reduce manufacturing expenses. This research examines the ideal device architecture utilizing a configuration of FTO/ETL/(CH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>NH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>)<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>CuCl<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf>/HTL/Au, assessed with the SCAPS-1D simulator. Six electron transport layers (ETLs) and one hole transport layer (HTL) were evaluated, with essential device parameters, including thickness, temperature, interface defect, doping density, and defect density, meticulously tuned to improve device performance. The optimized device configuration, FTO/WS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/(CH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>NH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>)<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>CuCl<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf>/CuSCN/Au, demonstrated exceptional performance compared to the tested ETL materials (IGZO, PCBM, SnO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>, WS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>, ZnO, and ZnSe), achieving a power conversion efficiency (PCE) of 33.35%, a short circuit current density (J<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SC</inf>) of 37.77 mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, an open circuit voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</inf>) of 1.0 V, and a fill factor (FF) of 87.65%. This advanced perovskite solar cell design highlights (CH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>NH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>)<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>CuCl<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> as a viable choice for next-generation solar energy applications, providing enhanced efficiency with less toxicity relative to traditional thin-film solar cells.

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Published
2025-02-13
DOI
https://doi.org/10.1109/ecce64574.2025.11013247
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Perovskite Materials and Applications
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article

Enhancing the Efficiency of (CH3NH3)2CuCl4-based Perovskite Solar Cells by Selecting a Suitable Electron Transport Layer

S.K. Ghosh, Subrata Sarker, Md. Maruf Hossain, Asadul Islam Shimul et al.
1 links
Perovskite Materials and Applications
article

Enhancing the Efficiency of (CH3NH3)2CuCl4-based Perovskite Solar Cells by Selecting a Suitable Electron Transport Layer

S.K. Ghosh, Subrata Sarker, Md. Maruf Hossain, Asadul Islam Shimul, Safia Aktar Dipa, Md Jannatul Naime
article en

Abstract

The compound (CH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>NH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>)<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>CuCl<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> demonstrates exceptional electrical and optical characteristics, positioning it as a viable candidate for solar cell device, with the potential to enhance efficiency and reduce manufacturing expenses. This research examines the ideal device architecture utilizing a configuration of FTO/ETL/(CH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>NH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>)<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>CuCl<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf>/HTL/Au, assessed with the SCAPS-1D simulator. Six electron transport layers (ETLs) and one hole transport layer (HTL) were evaluated, with essential device parameters, including thickness, temperature, interface defect, doping density, and defect density, meticulously tuned to improve device performance. The optimized device configuration, FTO/WS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/(CH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>NH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>)<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>CuCl<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf>/CuSCN/Au, demonstrated exceptional performance compared to the tested ETL materials (IGZO, PCBM, SnO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>, WS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>, ZnO, and ZnSe), achieving a power conversion efficiency (PCE) of 33.35%, a short circuit current density (J<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SC</inf>) of 37.77 mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, an open circuit voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</inf>) of 1.0 V, and a fill factor (FF) of 87.65%. This advanced perovskite solar cell design highlights (CH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>NH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>)<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>CuCl<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> as a viable choice for next-generation solar energy applications, providing enhanced efficiency with less toxicity relative to traditional thin-film solar cells.

Gopalganj Science and Technology University (BD), University of Missouri (US)
Affordable and clean energy
Openalex Percentile: Top 90%
Perovskite Materials and Applications
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