Investigation of Stack Oxide Double Gate Junction Less Transistor for Ammonia Gas Sensing

In the today's world, ammonia gas has many wider applications and can be used in the manufacturing of textiles, chemical fertilizers, plastics, pharmaceuticals, cosmetics, food and beverages etc. when the leakage of ammonia gas happens leads to severe health issues in humans so there is a need of the hour to design efficient ammonia gas sensor. In this paper a detailed 2D model of SO-DGJLT transistor is developed by using COMSOL Multiphysics. By using this model parameters like I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf>/V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</inf>, Subthreshold slope, threshold voltage, Sensitivity, Selectivity, can be calculated the change in electrical characteristics and a new device is comparable with previously designed gas sensor Junction less vertical TFET (JL-VTFET) to check the performance of the device Stack oxide double gate junction less transistor. Ammonia gas sensor with high performance is developed for the future outlook.