Sb₂S₃/Si Heterojunction Detectors for Visible Light

In this work, Sb2S3/Si heterojunction detectors were prepared by two methods: thermal evaporation and chemical vapour deposition. The differences between the Sb2S3 films prepared by the two methods were compared by XRD, Raman, XPS, SEM, and UV-vis-NIR spectroscopy. The differences caused by the methods are obvious and analysed, with the different crystal plane strengths of Sb2S3 polycrystalline films, the changes in the Sb valence state and the different morphology of Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> films. The photodetection performance of both Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/n-Si heterojunctions were evaluated in the wavelength of 520 nm, 638 nm, 780 nm. The photovoltaic of Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/Si prepared by thermal evaporation are more stable in the test.