Low and High Frequency Noise Analysis of Si-Ge TFET

This paper is centered on the assessment of the noise properties of Si-Ge TFETs belonging to both the low-frequency noise (LFN) and high-frequency noise (HFN) regimes through MATLAB simulations. The investigation also focuses on practical applications of insulating materials to reduce noise and improve device efficiency. In LFN, flicker noise is studied up to 10 kHz that is across a frequency range of 10 Hz to 10 kHz using high-k dielectrics Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>, HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and ZrO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>, Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> has the lowest noise levels, which is a result of low trap density, and consequently, low charge trapping. For HFN, thermal noise characterization is done within the range of 10 kHz to 10 MHz and the result demonstrate flat behavior with platform show the suitability of Si-Ge TFETs for high frequency applications.The obtained outcomes confirm the significance of the choice of material for exhibiting low-noise, stable characteristics which in return makes Si-Ge TFETs effective for low-power and high-speed electronic system applications. Other possibilities for further work are the extension of the device architecture, the exploration of further insulating material and experimental studies of the noise behavior of the device under different operating conditions.