Design and Simulation of GaInP/GaAs Tandem Cell for Maximum Power Conversion Efficiency

For increasing the efficiency of the solar photovoltaic efficiency, a double junction of GaInP/GaAs solar cell are modelled and simulated in this paper. In order to enable efficient absorption across a broad range of solar wavelengths, the cell architecture is especially designed to take use of the special properties of GaInP as the upper cell and GaAs as the lower cell. By incorporating a double emitter, a buffer layer and a BSF layer, along with a lattice-matched GaInP tunnel junction to the GaAs bottom cell, the design enhances charge carrier collection while minimizing recombination losses and ensuring current matching between the sub cells. As a result of these enhancements, overall efficiency has significantly increased. And finally it has been achieved a 35.9% efficient solar cell by optimization of different layer thickness and other parameters through numerical simulations.