Design and Performance Analysis of a Wide Bandwidth Power Amplifier

V Band millimeter wave communication is a developing technology for 5G wireless applications that require a lot of capacity. In the industry, faster and more dependable data connections are becoming more crucial for live video streaming. The operating spectrum and bandwidth for 3G and 4G are constrained below 6 GHz and are in use by numerous applications. The 5G millimeter wave (30 to 300 GHz) networks show promise in meeting consumer needs and by constructing a high Q-Network at the input terminal of the amplifying NMOS device and utilizing a source degenerative inductor, the proposed CMOS circuit architecture achieves a high gain of 14.3 dB. This work presents a two-stage CMOS 90 nm wide band 70 MHz power amplifier (PA) with superimposed staggered tuning approach. Instead of utilizing single stage CMOS technology, we have adopted two-stage CMOS technology to increase the value of the reflection coefficient, gain, and bandwidth. To enhance impedance matching, a matching network for inputs and an interstage matching network were created. At 54 GHz, the suggested PA network attains superior input matching, exhibiting S11(Input reflection co-efficient) values of -18.73 dB. At 54 GHz, the maximum value of S21 (Forward gain) is 14.3 dB and this average gain sustain over a 70 MHz frequency band. Furthermore, the amplifier’s capacity to withstand real-world circumstances, such as temperature changes and load imbalances, is assessed to show its stability and dependability in applications. In order to achieve superior outcomes at 54 GHz frequency, the biasing point and matching network components were optimized. The noise figure of proposed power amplifier is 15.94 dB at 54 GHz.