Novel strategy to prepare pure Cu<sub>4</sub>TiSe<sub>4</sub> and its high-pressure Raman and thermoelectric performance investigation
Nanostructured Cu 2 Se and TiSe 2 powders were used in combination with SPS method to fabricate nano-structured single-phase Cu 4 TiSe 4 , which undergoes a structural transition under high pressure and exhibits ultra-low lattice thermal conductivity.
Authors
- Shuohai Fang
- Wei He (ORCID: https://orcid.org/0000-0002-2438-4753)
- Tonghan Yang
- Guangfeng Zhang (ORCID: https://orcid.org/0000-0002-5558-0765)
- Hui Luo (ORCID: https://orcid.org/0000-0003-2527-0237)
- Chang-Zhong Liao
- Zhikai Zhu
Institutions
- Minzu University of China (CN)
- Guangxi University (CN)
- Center for High Pressure Science and Technology Advanced Research (CN)
Publication Details
- Journal
- Inorganic Chemistry Frontiers
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5qi00707k
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00