Advances in Doping Engineering and Optoelectronics of Low-Dimensional SnSe Micro/Nanostructures

硒化锡因其独特的层状晶体结构在新型热电材料领域备受瞩目，其兼具窄带隙、高光吸收系数等优异光电特性。值得注意的是，二维SnSe纳米片展现出独特的量子限域效应，其带隙可通过层数调控在1.1~2.1 eV范围内连续可调，这一特性使其在宽谱响应光电器件领域展现出巨大应用潜力。基于上述优势，SnSe材料体系已逐步从热电领域拓展至太阳能电池、光电探测器等前沿光电子器件研究，成为当前低维半导体材料研究的热点方向。本文系统阐释SnSe的晶体结构特征及其各向异性电子能带结构，重点梳理二维SnSe材料的主流制备技术，对于SnSe的掺杂调控策略进行了详细的介绍。详细的叙述了近年来SnSe基光伏器件与光电探测器件的实验研究进展。最后，总结了SnSe基光电器件的未来发展方向与面临的挑战。Tin Selenide (SnSe) has garnered significant attention in the field of novel thermoelectric materials due to its unique layered crystal structure, coupled with excellent optoelectronic properties such as a narrow bandgap and high optical absorption coefficient. Notably, two-dimensional SnSe nanosheets exhibit distinct quantum confinement effects, enabling continuous bandgap tuning from 1.1 to 2.1 eV by adjusting the layer number. This tunability endows SnSe with immense potential for applications in broad-spectrum-responsive optoelectronic devices. Leveraging these advantages, SnSe has gradually expanded from thermoelectric applications into frontier optoelectronic device research, including solar cells and photodetectors, establishing itself as a hotspot in low-dimensional semiconductor studies. This review systematically elucidates the crystal structure characteristics and anisotropic electronic band structure of SnSe, highlights mainstream preparation techniques for two-dimensional SnSe materials, and provides a detailed introduction to doping modulation strategies. Furthermore, it comprehensively reviews recent experimental advancements in SnSe-based photovoltaic and photodetection devices. Finally, the future development directions and challenges facing SnSe-based optoelectronics are summarized.