Solid State Defect Emitters With no Electrical Activity
Point defects may introduce defect levels into the fundamental bandgap of the host semiconductors that alter the electrical properties of the material. As a consequence, the in-gap defect levels and states automatically lower the threshold energy of optical excitation associated with the optical gap of the host semiconductor. It is, therefore, a common assumption that solid-state defect emitters in semiconductors ultimately alter the conductivity of the host. This study demonstrate, on a particular defect in 4H silicon carbide, that an unrecognized class of point defects exists that are optically active but electrically inactive in the ground state.
Authors
- Bing Huang
- Péter Udvarhelyi (ORCID: https://orcid.org/0000-0002-7073-1664)
- Pei Li (ORCID: https://orcid.org/0000-0002-4108-412X)
- Ádám Gali (ORCID: https://orcid.org/0000-0002-3339-5470)
- Song Li (ORCID: https://orcid.org/0000-0002-8297-5199)
Institutions
- Tianjin University of Technology (CN)
- University of California, Los Angeles (US)
- Beijing Normal University (CN)
- Budapest University of Technology and Economics (HU)
- HUN-REN Wigner Research Centre for Physics (HU)
- Montavid Thermodynamic Research Group (HU)
- Beijing Computational Science Research Center (CN)
Publication Details
- Journal
- Advanced Science
- Published
- 2025-05-28
- DOI
- https://doi.org/10.1002/advs.202503350
- Citations
- 2
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 1.46
Funders
- European Commission
- National Natural Science Foundation of China
- NSAF Joint Fund
- National Key Research and Development Program of China
- National Safety Academic Fund
- National Research, Development and Innovation Office