Current-induced field-free magnetization switching in CoFeB/Cu/CoFeB pseudo-spin-valves

Emergent orbital torque (OT) from the orbital Hall effect of light metals has significant potential for electrical control of magnetization. In this study, the electric manipulation of a most basic spintronic nanostructure, the pseudo-spin-valve (PSV) CoFeB/Cu/CoFeB, is demonstrated with the Cu spacer acting as an effective orbital current source. In the absence of an external magnetic field, the bottom and top CoFeB layers exhibit opposite switching behavior during current scanning, resulting in a current-dependent giant magnetoresistance (GMR) curve that is inverted relative to the conventional field-driven PSV-GMR curve. The OT-induced field-like effective field, evaluated through the horizontal shift of the conventional GMR curve under different currents, is comparable to those of the heavy metal-based structures Pt/CoFeB and Ta/CoFeB. In addition to emphasizing the significance of orbital transport in all-light-metal structures, the finding introduces a different degree of freedom to energy efficient spin-valve devices.

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Publication Details

Journal
Applied Physics Letters
Published
2025-05-26
DOI
https://doi.org/10.1063/5.0251666
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
0.00

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article

Current-induced field-free magnetization switching in CoFeB/Cu/CoFeB pseudo-spin-valves

L. Z. Bi, Jianwang Cai, Jintao Ke, Guansong Li et al.
Applied Physics Letters
Magnetic properties of thin films
article

Current-induced field-free magnetization switching in CoFeB/Cu/CoFeB pseudo-spin-valves

L. Z. Bi, Jianwang Cai, Jintao Ke, Guansong Li, Pengju Wang, Zibo Zhu, Chaoqun Hu, Ying Zhang
article en

Abstract

Emergent orbital torque (OT) from the orbital Hall effect of light metals has significant potential for electrical control of magnetization. In this study, the electric manipulation of a most basic spintronic nanostructure, the pseudo-spin-valve (PSV) CoFeB/Cu/CoFeB, is demonstrated with the Cu spacer acting as an effective orbital current source. In the absence of an external magnetic field, the bottom and top CoFeB layers exhibit opposite switching behavior during current scanning, resulting in a current-dependent giant magnetoresistance (GMR) curve that is inverted relative to the conventional field-driven PSV-GMR curve. The OT-induced field-like effective field, evaluated through the horizontal shift of the conventional GMR curve under different currents, is comparable to those of the heavy metal-based structures Pt/CoFeB and Ta/CoFeB. In addition to emphasizing the significance of orbital transport in all-light-metal structures, the finding introduces a different degree of freedom to energy efficient spin-valve devices.

Applied Physics LettersVol. 126(21)
Chinese Academy of Sciences (CN), Physical Sciences (United States) (US), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ), Institute of Physics (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 91%
Magnetic properties of thin films
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Current-induced field-free magnetization switching in CoFeB/Cu/CoFeB pseudo-spin-valves — L. Z. Bi, Jianwang Cai, et al. · Applied Physics Letters (2025) | TGRS Research Map | TGRS