THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure

The recent discovery of highly conducting two-dimensional hole gases (2DHGs) in GaN/AlN heterojunctions has opened the door to efficient complementary GaN electronics, a long-standing challenge in wide-bandgap semiconductor device physics. Electrical transport studies and simulations indicate that both heavy- and light-hole valence bands are occupied in these 2DHGs, but direct experimental characterization of the fundamental parameters of the mobile holes remains at an early stage. Here, we use time-domain terahertz spectroscopy and pulsed magnetic fields up to 31 T to directly measure cyclotron resonance of the mobile 2D holes in these GaN-based 2DHGs at low temperature (8 K), revealing key material properties including effective masses, densities, scattering times, and mobilities.

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Publication Details

Journal
Applied Physics Letters
Published
2025-05-26
DOI
https://doi.org/10.1063/5.0273413
Citations
3
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
3.77

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article

THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure

Abul K. Azad, D. G. Rickel, Debdeep Jena, Zexuan Zhang et al.
3 citations
Applied Physics Letters
GaN-based semiconductor devices and materials
3.77
article

THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure

Abul K. Azad, D. G. Rickel, Debdeep Jena, Zexuan Zhang, Peisong Peng, S. A. Crooker, Huili Grace Xing, Chuan F. C. Chang, Jingyuan Wang, Yue Huang
article en
3 citations

Abstract

The recent discovery of highly conducting two-dimensional hole gases (2DHGs) in GaN/AlN heterojunctions has opened the door to efficient complementary GaN electronics, a long-standing challenge in wide-bandgap semiconductor device physics. Electrical transport studies and simulations indicate that both heavy- and light-hole valence bands are occupied in these 2DHGs, but direct experimental characterization of the fundamental parameters of the mobile holes remains at an early stage. Here, we use time-domain terahertz spectroscopy and pulsed magnetic fields up to 31 T to directly measure cyclotron resonance of the mobile 2D holes in these GaN-based 2DHGs at low temperature (8 K), revealing key material properties including effective masses, densities, scattering times, and mobilities.

Applied Physics LettersVol. 126(21)
Los Alamos National Laboratory (US), Cornell University (US), Center for Integrated Nanotechnologies (US), National High Magnetic Field Laboratory (US)
National Science Foundation, U.S. Department of Energy, Cornell Center for Materials Research, Defense Sciences Office, DARPA
Sustainable cities and communities
Openalex Percentile: Top 7%
GaN-based semiconductor devices and materials
3.77
DOIOpen Access PDFOpenAlex
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THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure — Abul K. Azad, D. G. Rickel, et al. · Applied Physics Letters (2025) | TGRS Research Map | TGRS