Observation of conflicting Seebeck coefficient and Hall coefficient in Sb-doped MnBi4Te7 crystals

In the past decades, great efforts have been devoted to designing and developing high-efficiency thermoelectric (TE) materials due to the increasing demands in the fields of power generation, cooling, and sensing. Given that the developments of TE materials based on charge and phonon engineering are facing a plateau, the manipulation of spin degree of freedom has been considered as an innovative strategy to further improve the TE performance, which has drawn growing attention in recent years. In this work, we studied the thermoelectric transport properties of Sb-doped MnBi4Te7 crystals, which contain the Bi2Te3 layers for charge transport and MnTe layers for spins. We observed abnormally low thermopower in the crystals with Sb doping ratios of 0.25 and 0.35, and the sign of thermopower is contradictory to the Hall coefficient. Further experiments evidenced magnetic field-enhanced thermopower and electrical resistivity over a wide temperature range, which support a spin-driven thermoelectric mechanism. An explanation based on the interplay between the spin and heat in entropy transport via charged carriers is proposed.

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Publication Details

Journal
Applied Physics Letters
Published
2025-05-26
DOI
https://doi.org/10.1063/5.0252064
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Observation of conflicting Seebeck coefficient and Hall coefficient in Sb-doped MnBi4Te7 crystals

Lunhua He, Yinong Yin, Jiazheng Hao, Dan Liu et al.
Applied Physics Letters
Advanced Thermoelectric Materials and Devices
article

Observation of conflicting Seebeck coefficient and Hall coefficient in Sb-doped MnBi4Te7 crystals

Lunhua He, Yinong Yin, Jiazheng Hao, Dan Liu, Guoqiang Liu, Yan Zhang, Jun Jiang, Xiaojian Tan, Yicheng Lang
article en

Abstract

In the past decades, great efforts have been devoted to designing and developing high-efficiency thermoelectric (TE) materials due to the increasing demands in the fields of power generation, cooling, and sensing. Given that the developments of TE materials based on charge and phonon engineering are facing a plateau, the manipulation of spin degree of freedom has been considered as an innovative strategy to further improve the TE performance, which has drawn growing attention in recent years. In this work, we studied the thermoelectric transport properties of Sb-doped MnBi4Te7 crystals, which contain the Bi2Te3 layers for charge transport and MnTe layers for spins. We observed abnormally low thermopower in the crystals with Sb doping ratios of 0.25 and 0.35, and the sign of thermopower is contradictory to the Hall coefficient. Further experiments evidenced magnetic field-enhanced thermopower and electrical resistivity over a wide temperature range, which support a spin-driven thermoelectric mechanism. An explanation based on the interplay between the spin and heat in entropy transport via charged carriers is proposed.

Applied Physics LettersVol. 126(21)
Beijing Technology and Business University (CN), Chinese Academy of Sciences (CN), China Spallation Neutron Source (CN), Institute of High Energy Physics (CN), Ningbo Institute of Industrial Technology (CN), Spallation Neutron Source
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 92%
Advanced Thermoelectric Materials and Devices
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