Biocompatible Lactulose-Based Resistive Random Access Memory for Implantable Electronics
Bioimplantable memory devices for digital healthcare must satisfy various requirements, such as biocompatibility and biostability. In this study, a biocompatible and biostable resistive random-access memory (RRAM) based on lactulose was developed as a bioimplantable memory device. Lactulose is a nonabsorbable disaccharide that includes multiple hydroxyl groups (-OH). To improve the durability of the RRAM, lactulose, which is biocompatible and does not decompose easily in the human body, was selected as the switching-layer material. The fabricated lactulose-based RRAM demonstrated stable bipolar resistive switching characteristics with a switching window of approximately 10<sup>3</sup>. In addition, a native MgO<sub><i>x</i></sub> layer between the Mg top electrode and lactulose switching layer, which is attributed to bipolar resistive switching, was observed in the lactulose-based RRAM. Endurance and retention tests were conducted to confirm the stability of the device and its data storage properties. High uniformity and stability were also observed when the lactulose-based RRAM was built as a 6 × 6 crossbar array. Furthermore, an <i>in vitro</i> cell cytotoxicity test confirmed the feasibility for bioimplantable electronics of the fabricated lactulose-based RRAM, which shows a relative cell viability of 80.2% after 72 h of cell culture. Therefore, the lactulose-based RRAM can be used in bioimplantable electronics based on its bipolar resistive switching properties, stability, and data storage performance.
Authors
- Hye Jin Son
- Jong Bin An
- Hyun Jae Kim (ORCID: https://orcid.org/0000-0002-6879-9256)
- Byulhana Kim
- Dong Hyun Choi (ORCID: https://orcid.org/0000-0001-6036-1404)
- Moon Ho Lee (ORCID: https://orcid.org/0000-0002-8435-8557)
- Beom Soo Kim (ORCID: https://orcid.org/0000-0002-7251-7231)
- Justin J. Chung (ORCID: https://orcid.org/0000-0001-8058-2255)
- Byung Ha Kang (ORCID: https://orcid.org/0000-0002-6506-5118)
- Hyung Tae Kim
Institutions
- Seoul National University (KR)
- Yonsei University (KR)
- New Generation University College (ET)
- Seoul National University Hospital (KR)
- Massachusetts Institute of Technology (US)
Publication Details
- Journal
- ACS Applied Materials & Interfaces
- Published
- 2025-05-28
- DOI
- https://doi.org/10.1021/acsami.5c04446
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Research Foundation of Korea