Dislocation cluster generation behavior in multicrystalline silicon investigated using twin network analysis

We utilized twin network analysis of polycrystalline materials through graph theory to visualize microstructures and examine the behavior of dislocation cluster generation in multicrystalline silicon grown by directional solidification. This approach allows for a rapid and statistical understanding of microstructures and their correlations by representing these features and their changes as network graphs. Our analysis revealed that dislocation clusters are formed at asymmetric Σ27a grain boundaries, which result from a specific twinning process. Gaining this knowledge is expected to assist in identifying grain boundary groups that can minimize the formation of dislocation clusters.