Ultrafast relaxation dynamics and nonequilibrium processes in graphite
We present a detailed investigation of ultrafast carrier dynamics in single-crystal graphite using time- and angle-resolved photoemission spectroscopy (Tr-ARPES). By systematically analyzing the electronic temperature ${T}_{e}$, chemical potential $\ensuremath{\mu}$, and nonthermal carrier dynamics across various pump fluence and energy regimes, we provide insights into the multistep relaxation processes that govern the system's evolution from nonequilibrium to quasi-equilibrium states. Our results reveal that at low fluences ($\mathit{F}<\phantom{\rule{0.16em}{0ex}}0.50\phantom{\rule{4pt}{0ex}}\mathrm{mJ}/{\mathrm{cm}}^{2}$), the electronic system behaves predominantly as a quasithermalized ensemble, aligning well with the Fermi-Dirac distribution. However, at higher fluences ($\mathit{F}\ensuremath{\geqslant}\phantom{\rule{4pt}{0ex}}0.50\phantom{\rule{4pt}{0ex}}\mathrm{mJ}/{\mathrm{cm}}^{2}$), nonthermal carriers emerge, driving significant deviations from thermal equilibrium. These carriers exhibit ultrafast lifetimes of approximately $284\ifmmode\pm\else\textpm\fi{}38$ fs, primarily dictated by electron-electron scattering and strong coupling to optical phonons. Through fluence-dependence analysis, we demonstrate the distinct relaxation dynamics of high-energy carriers ($>0.2$ eV) dominated by ultrafast scattering, compared with low-energy carriers ($<0.2$ eV) where the phonon bottleneck effect prolongs decay times to up to 32 ps at low fluences. In addition, we demonstrate a linkage between dynamic high-temperature quasi-equilibrium states from pump excitation and static ARPES measurements at 1000 K, highlighting the correspondence between dynamic quasi-equilibrium and thermal equilibrium states. Energy region dependent investigations reveal the critical role of free-carrier absorption in the low-energy regime and nonlinear interactions at higher energies, emphasizing the intricate balance between carrier-carrier and carrier-phonon interactions in shaping the relaxation pathways. This study provides a unified framework for understanding carrier dynamics in graphite, bridging static and dynamic perspectives.
Authors
- Yang‐Hao Chan (ORCID: https://orcid.org/0000-0002-9113-5319)
- Hao-Hsiang Jia (ORCID: https://orcid.org/0000-0002-8241-6979)
- A. Chainani (ORCID: https://orcid.org/0000-0002-5639-5393)
- S. Souma (ORCID: https://orcid.org/0000-0003-2460-4602)
- Chih‐Wei Luo (ORCID: https://orcid.org/0000-0002-6453-7435)
- Ming-Chang Chen (ORCID: https://orcid.org/0000-0002-6560-1339)
- T. Sato (ORCID: https://orcid.org/0000-0002-4544-5463)
- K. Sugawara (ORCID: https://orcid.org/0000-0003-2926-9436)
- Ping-Hui Lin (ORCID: https://orcid.org/0000-0001-7647-0971)
- Yuki Nakata (ORCID: https://orcid.org/0000-0003-4734-6124)
- Cheng-Maw Cheng
Institutions
- National Yang Ming Chiao Tung University (TW)
- Tohoku University (JP)
- National Tsing Hua University (TW)
- National Synchrotron Radiation Research Center (TW)
- Advanced Institute of Materials Science (JP)
- National Center for Theoretical Sciences (TW)
- Institute of Atomic and Molecular Sciences, Academia Sinica (TW)
Publication Details
- Journal
- Physical review. B./Physical review. B
- Published
- 2025-05-28
- DOI
- https://doi.org/10.1103/physrevb.111.195430
- Citations
- 1
- Primary Topic
- Graphene research and applications
- Type
- article
- Field-Weighted Citation Impact
- 0.52
Funders
- Japan Society for the Promotion of Science
- Japan Science and Technology Agency