Monte Carlo simulation of thermoelectric properties in silicon nanofilms: diffusive seebeck coefficient analysis

• Utilized an ensemble Monte Carlo solver for electrons that is coupled with a phonon bath that can have non-uniform temperatures. • Studied the effects of the non-uniform temperature on the I-V characteristics and on the electrons temperature. • Studied the effects of the non-uniform temperature and applied voltages on the kinetic energies of the electrons, electrostatic potential and electric field created inside the device. • Investigated the diffusive Seebeck coefficient in silicon-based nanofilms under the influence of changing the average temperature, temperature gradient, device length, and doping concentration and checked with previous references that our results are consistent. A silicon based nanofilm is examined by using self-consistent electron-phonon transport model. An ensemble Monte Carlo solver for electrons is coupled with a phonon bath that can have a non-uniform temperature. In this simulator, the electron-phonon scattering rates depend on the local temperature and the boundary conditions are also temperature dependent. Using this simulation tool, the thermoelectric properties can be studied, at the microscopic level, in doped semiconductor nanostructures of different sizes and with different types of interfaces. In the present work, the only electronic so-called diffusive Seebeck coefficient of silicon-based nanofilms is investigated as the phonon drag effect is not considered. The influence of the average temperature, temperature gradient, device size, and carrier concentration are investigated.