A Back-to-Back Gap Waveguide-Based Packaging Structure for E-Band Radio Frequency Front-End

This paper presents our research on an E-band Radio Frequency (RF) front-end packaging structure based on back-to-back gap waveguide (GW). This design effectively mitigates the impact of air gaps on performance and offers the advantage of large assembly tolerances. Additionally, its back-to-back structure enables structural stacking, which can reduce the overall packaging size. In terms of functionality, the structure integrates hybrid couplers, bandpass filters, and amplifier packaging structures. Notably, the hybrid couplers provide high port isolation, facilitating a higher isolation duplex function by simply connecting high-order bandpass filters at the output ports without the need for additional optimization. Furthermore, these couplers also serve as power dividers/combiners. When combined with the H-plane amplifier packaging structures, the output power of the module is theoretically increased by 3 dB. Based on the measurements, the results indicate that this structure operates within the frequency ranges of 71-76 GHz and 81-86 GHz. The common port return loss is below 12 dB, while the in-band insertion loss is less than 2.26 dB and 2.42 dB, respectively. These findings demonstrate excellent electrical performance and suitability for E-band communication systems.

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Publication Details

Journal
Micromachines
Published
2025-05-28
DOI
https://doi.org/10.3390/mi16060644
Primary Topic
Microwave Engineering and Waveguides
Type
article
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article

A Back-to-Back Gap Waveguide-Based Packaging Structure for E-Band Radio Frequency Front-End

Tao Xiu, Lin Peng, Zhi Li, Lei Wang
Micromachines
Microwave Engineering and Waveguides
article

A Back-to-Back Gap Waveguide-Based Packaging Structure for E-Band Radio Frequency Front-End

Tao Xiu, Lin Peng, Zhi Li, Lei Wang
article en

Abstract

This paper presents our research on an E-band Radio Frequency (RF) front-end packaging structure based on back-to-back gap waveguide (GW). This design effectively mitigates the impact of air gaps on performance and offers the advantage of large assembly tolerances. Additionally, its back-to-back structure enables structural stacking, which can reduce the overall packaging size. In terms of functionality, the structure integrates hybrid couplers, bandpass filters, and amplifier packaging structures. Notably, the hybrid couplers provide high port isolation, facilitating a higher isolation duplex function by simply connecting high-order bandpass filters at the output ports without the need for additional optimization. Furthermore, these couplers also serve as power dividers/combiners. When combined with the H-plane amplifier packaging structures, the output power of the module is theoretically increased by 3 dB. Based on the measurements, the results indicate that this structure operates within the frequency ranges of 71-76 GHz and 81-86 GHz. The common port return loss is below 12 dB, while the in-band insertion loss is less than 2.26 dB and 2.42 dB, respectively. These findings demonstrate excellent electrical performance and suitability for E-band communication systems.

MicromachinesVol. 16(6)
Xidian University (CN), China Electronics Technology Group Corporation (CN), China Electronics Standardization Institute (CN)
Openalex Percentile: Top 90%
Microwave Engineering and Waveguides
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A Back-to-Back Gap Waveguide-Based Packaging Structure for E-Band Radio Frequency Front-End — Tao Xiu, Lin Peng, et al. · Micromachines (2025) | TGRS Research Map | TGRS