Interface Engineering Enables High‐performance PbS Colloidal Quantum Dots Imager via Tungsten Oxide Hydrophilic Layer

Abstract PbS colloidal quantum dots (CQDs) offer solution‐processability, tunable bandgap, and monolithic integration with complementary metal oxide semiconductor (CMOS) readout circuit, making them highly adaptable for advanced infrared detection. However, optimizing interfacial quality remains critical for achieving high performance of PbS CQDs imager. In particular, the hydrophobicity of the C 60 sacrificial layer disrupts the atomic layer deposition of SnO 2 , leading to poor film uniformity, low density, and increased interfacial defects. To address this, a hydrophilic WO x interlayer atop C 60 is introduced, significantly improving SnO 2 deposition, reducing interfacial defects, and suppressing dark current density to 287 nA/cm 2 at −0.5 V. This strategy also mitigates halide ion migration from halide‐passivated CQDs surface to SnO 2 layer, enhancing device stability. Consequently, this CQDs photodiodes achieve a high specific detectivity of 2.47 × 10 12 cm·Hz 1/2 ·W −1 . Furthermore, the monolithically integrated CQDs imager with CMOS readout circuit demonstrates advanced capabilities for material differentiation and penetration imaging.

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Publication Details

Journal
Laser & Photonics Review
Published
2025-05-28
DOI
https://doi.org/10.1002/lpor.202500345
Citations
2
Primary Topic
Quantum Dots Synthesis And Properties
Type
article
Field-Weighted Citation Impact
1.04

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article

Interface Engineering Enables High‐performance PbS Colloidal Quantum Dots Imager via Tungsten Oxide Hydrophilic Layer

Boxiang Song, Jiang Tang, Liang Gao, Jianbing Zhang et al.
2 citations
Laser & Photonics Review
Quantum Dots Synthesis And Properties
1.04
article

Interface Engineering Enables High‐performance PbS Colloidal Quantum Dots Imager via Tungsten Oxide Hydrophilic Layer

Boxiang Song, Jiang Tang, Liang Gao, Jianbing Zhang, Peiyan Zhang, Chengjie Deng, Long Chen, Jing Liu, Xing Zhou, Sen Li, Ying Zhou, Yichuan Wang, Tianhao Cui, Yongshun Wang
article en
2 citations

Abstract

Abstract PbS colloidal quantum dots (CQDs) offer solution‐processability, tunable bandgap, and monolithic integration with complementary metal oxide semiconductor (CMOS) readout circuit, making them highly adaptable for advanced infrared detection. However, optimizing interfacial quality remains critical for achieving high performance of PbS CQDs imager. In particular, the hydrophobicity of the C 60 sacrificial layer disrupts the atomic layer deposition of SnO 2 , leading to poor film uniformity, low density, and increased interfacial defects. To address this, a hydrophilic WO x interlayer atop C 60 is introduced, significantly improving SnO 2 deposition, reducing interfacial defects, and suppressing dark current density to 287 nA/cm 2 at −0.5 V. This strategy also mitigates halide ion migration from halide‐passivated CQDs surface to SnO 2 layer, enhancing device stability. Consequently, this CQDs photodiodes achieve a high specific detectivity of 2.47 × 10 12 cm·Hz 1/2 ·W −1 . Furthermore, the monolithically integrated CQDs imager with CMOS readout circuit demonstrates advanced capabilities for material differentiation and penetration imaging.

Laser & Photonics ReviewVol. 19(19)
Wenzhou University (CN), Yangtze Optical Electronic (China) (CN), Applied Pulsed Power (United States) (US), Wuhan National Laboratory for Optoelectronics (CN), Huazhong University of Science and Technology (CN)
National Natural Science Foundation of China, State Key Laboratory of Pulsed Power Laser Technology, National Key Research and Development Program of China
Openalex Percentile: Top 25%
Quantum Dots Synthesis And Properties
1.04
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