Highly Sensitive and Linear Temperature Sensor Based on Diamond-Ga₂O₃ Schottky-p-n Diode

A highly sensitive and stable temperature sensor based on a diamond-Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky-pn diode is demonstrated in this work. The forward current exhibits a pronounced temperature dependence, with the turn-on voltage shifting from 2.08 V to 1.06 V as the temperature increases from 298 K to 523 K. A superior linearity is observed between the sub-threshold forward voltage drop at a constant current and temperature. A high voltage sensitivity is extracted to be around 4.38 mV/K at 100 nA. The sensitivity decreases with current increasing, but remains higher than 3 mV/K at 100 μA, highlighting the excellent performance of the diamond-Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky-pn diode as a temperature sensor. The device demonstrates a good repeatability at high current regions, indicating its potential for high-temperature sensing applications.