Enhancing Buck Converter Efficiency by Using GaN/Si Hybrid Switches to Suppress Dynamic On-State Resistance

In this work, it is demonstrated that the buck converter using a GaN/Si hybrid switch can achieve an even higher power conversion efficiency than the one using a pure-GaN switch with the same ratings. By replacing one of the dual paralleled GaN HEMTs with a Si Super-Junction (SJ) MOSFET having the same voltage rating yet a slightly higher resistance, the total conduction loss, however, is significantly decreased. This is accomplished through suppressing the dynamic ON-state resistance peculiar to GaN HEMTs. Optimizing the gate timing between the GaN and the Si devices within the hybrid switch enables exceptional low-loss performance. Both device-level and system-level demonstrations are performed. The experimental results prove that the p-GaN gate HEMT/Si MOSFET hybrid switch increases the efficiency by 2% and 3%, respectively, when compared to its pure-GaN and pure-Si counterparts, at an output power of 240 W and a switching frequency of 500 kHz.

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Publication Details

Journal
IEEE Transactions on Power Electronics
Published
2025-05-28
DOI
https://doi.org/10.1109/tpel.2025.3574138
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.26

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article

Enhancing Buck Converter Efficiency by Using GaN/Si Hybrid Switches to Suppress Dynamic On-State Resistance

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IEEE Transactions on Power Electronics
GaN-based semiconductor devices and materials
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article

Enhancing Buck Converter Efficiency by Using GaN/Si Hybrid Switches to Suppress Dynamic On-State Resistance

Xiaorong Luo, Xiaodong Bi, Yuanan Liu, Jie Wei, Gaoqiang Deng, Yingyi Yan, Xintong Xie, Jingyu Shen, Renkuan Liu, Bo Zhang, Yang Cheng, Chenyan Zheng
article en
1 citations

Abstract

In this work, it is demonstrated that the buck converter using a GaN/Si hybrid switch can achieve an even higher power conversion efficiency than the one using a pure-GaN switch with the same ratings. By replacing one of the dual paralleled GaN HEMTs with a Si Super-Junction (SJ) MOSFET having the same voltage rating yet a slightly higher resistance, the total conduction loss, however, is significantly decreased. This is accomplished through suppressing the dynamic ON-state resistance peculiar to GaN HEMTs. Optimizing the gate timing between the GaN and the Si devices within the hybrid switch enables exceptional low-loss performance. Both device-level and system-level demonstrations are performed. The experimental results prove that the p-GaN gate HEMT/Si MOSFET hybrid switch increases the efficiency by 2% and 3%, respectively, when compared to its pure-GaN and pure-Si counterparts, at an output power of 240 W and a switching frequency of 500 kHz.

IEEE Transactions on Power ElectronicsVol. 40(10)
Beijing University of Posts and Telecommunications (CN), University of Electronic Science and Technology of China (CN), Chengdu University of Information Technology (CN), China Resources (China) (CN), National Engineering Research Center of Electromagnetic Radiation Control Materials (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 21%
GaN-based semiconductor devices and materials
1.26
DOISourceOpenAlex
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