Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges

Abstract Hafnium (Hf) oxide-based ferroelectric materials have emerged as a transformative platform for next-generation non-volatile memory and advanced computing technologies. This review comprehensively examines the development, challenges, and applications of HfO 2 ferroelectrics, emphasizing their CMOS compatibility, scalability, and robust polarization at nanoscale dimensions. Breakthroughs in doping strategies, stress engineering, and VO control have stabilized the metastable orthorhombic phase, enabling high-performance devices such as ferroelectric RAM (FeRAM), ferroelectric field-effect transistors (FeFETs), and ferroelectric tunnel junctions (FTJs). These devices offer ultrafast switching, low power consumption, and multi-level storage, driving innovations in neuromorphic computing, in-memory processing, and cryogenic systems; nonetheless, they face ongoing challenges in reliability, such as fatigue and imprint effects, and scalability at sub-5 nm technology nodes. Emerging frontiers, such as wurtzite-structured nitrides (e.g., AlScN) and antiferroelectric ZrO 2 -based systems, have garnered significant attention due to their exceptionally high remanent polarization and promising potential for enhanced endurance, respectively. Further addressing the reliability issues of these emerging ferroelectric materials and the challenges associated with large-scale integration processes through interdisciplinary efforts will unlock the full potential of ferroelectric technologies, positioning them as pivotal enablers of post-Moore computing architectures and sustainable AI-driven applications.

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Publication Details

Journal
Science China Information Sciences
Published
2025-05-26
DOI
https://doi.org/10.1007/s11432-025-4432-x
Citations
6
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
4.38
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article

Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges

Xiao Yu, Kechao Tang, Tiancheng Gong, Zhihao Shen et al.
6 citations
Science China Information Sciences
Ferroelectric and Negative Capacitance Devices
4.38
article

Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges

Xiao Yu, Kechao Tang, Tiancheng Gong, Zhihao Shen, Ni Zhong, Xinqiang Wang, Zheng‐Dong Luo, Ran Cheng, Chengji Jin, Zhiyuan Fu, Yan Cheng, Jiezhi Chen, Tianling Ren, Bochang Li, Jiuren Zhou, Fei Xue, Genquan Han, Jin Luo, Tianjiao Xin, Huizhong Xu, Peiyuan Du, Siying Zheng, Haoji Qian, Jixuan Wu, Ping Wang, Huan Liu, Qing Luo, Yan Liu, W. F. Mader, Jiajia Chen, Tianyu Wang, Yue Hao, Bing Chen, Can Liu, Xiaoxi Li, Xiuyan Li, Xueqing Li, Jie Sun, Anquan Jiang, Lin Chen
article en
6 citations

Abstract

Abstract Hafnium (Hf) oxide-based ferroelectric materials have emerged as a transformative platform for next-generation non-volatile memory and advanced computing technologies. This review comprehensively examines the development, challenges, and applications of HfO 2 ferroelectrics, emphasizing their CMOS compatibility, scalability, and robust polarization at nanoscale dimensions. Breakthroughs in doping strategies, stress engineering, and VO control have stabilized the metastable orthorhombic phase, enabling high-performance devices such as ferroelectric RAM (FeRAM), ferroelectric field-effect transistors (FeFETs), and ferroelectric tunnel junctions (FTJs). These devices offer ultrafast switching, low power consumption, and multi-level storage, driving innovations in neuromorphic computing, in-memory processing, and cryogenic systems; nonetheless, they face ongoing challenges in reliability, such as fatigue and imprint effects, and scalability at sub-5 nm technology nodes. Emerging frontiers, such as wurtzite-structured nitrides (e.g., AlScN) and antiferroelectric ZrO 2 -based systems, have garnered significant attention due to their exceptionally high remanent polarization and promising potential for enhanced endurance, respectively. Further addressing the reliability issues of these emerging ferroelectric materials and the challenges associated with large-scale integration processes through interdisciplinary efforts will unlock the full potential of ferroelectric technologies, positioning them as pivotal enablers of post-Moore computing architectures and sustainable AI-driven applications.

Science China Information SciencesVol. 68(6)
Xuzhou University of Technology (CN), Xidian University (CN), Shandong University (CN), Shanghai Jiao Tong University (CN), Peking University (CN), Fudan University (CN), Institute of Microelectronics (SG), Institute of Microelectronics (CN), Zhejiang Lab (CN), Shanghai Fudan Microelectronics (China) (CN), Zhejiang University of Technology (CN), East China Normal University (CN), Zhejiang University (CN), Southeast University (CN), Tsinghua University (CN)
Openalex Percentile: Top 6%
Ferroelectric and Negative Capacitance Devices
4.38
DOIOpen Access PDFOpenAlex
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