Electrical Control of Orbital Torque‐Induced In‐Plane Magnetization Switching in Ni₈₁Fe₁₉/CuO<i>_x</i> Bilayers

Abstract Orbital torque (OT), arising from interfacial Rashba and orbital Hall effects in light metal oxides, offers new avenues for controlling the magnetization of ferromagnetic materials. However, achieving effectively dynamic control of orbital current and the modulation of orbital current‐induced torque by an electric field in light metal oxides remains challenging. In this study, the orbital current‐induced magnetoresistance (OMR) effect and the efficiency of OT generation in Ni 81 Fe 19 /CuO x /TaN heterostructures are investigated. Current‐induced OT switching of the magnetization with in‐plane magnetic anisotropy can be achieved, with the switching detected through the OMR. Furthermore, a solid‐state integrable hydrogen electrolyte, silicon phosphate is introduced, as the gate to manipulate the oxidation state at the Ni 81 Fe 19 /CuO x interface. This enables reversible modulation of both the magnetoresistance effect and the OT generation efficiency. These findings present an efficient approach to reversibly modulate the orbital current, thereby advancing the development of voltage‐programmable orbitronics devices.