Dynamic deformation modeling for the interfaces of growth, etching, and deposition under switching flow in TSSG-SiC growth

A flatter growth interface and a more acceptable growth rate can be achieved with the imbalanced switching flow for long-term SiC crystal growth.

Authors

Shunta Harada
Xinjun Liu (ORCID: https://orcid.org/0000-0001-9003-9299)
Toru Ujihara
Tomoaki Furusho
Kentaro Kutsukake (ORCID: https://orcid.org/0000-0001-7878-347X)
Zhicheng Guan

Institutions

Nagoya University (JP)

Publication Details

Journal: CrystEngComm
Published: 2025-01-01
DOI: https://doi.org/10.1039/d5ce00314h
Citations: 3
Primary Topic: Silicon and Solar Cell Technologies
Type: article
Field-Weighted Citation Impact: 2.19

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article

Dynamic deformation modeling for the interfaces of growth, etching, and deposition under switching flow in TSSG-SiC growth

Shunta Harada, Xinjun Liu, Toru Ujihara, Tomoaki Furusho et al.

Jan 1, 2025

3 citations

CrystEngComm

Silicon and Solar Cell Technologies

2.19

article

Dynamic deformation modeling for the interfaces of growth, etching, and deposition under switching flow in TSSG-SiC growth

Shunta Harada, Xinjun Liu, Toru Ujihara, Tomoaki Furusho, Kentaro Kutsukake, Zhicheng Guan

January 1, 2025article en

3 citations

Abstract

A flatter growth interface and a more acceptable growth rate can be achieved with the imbalanced switching flow for long-term SiC crystal growth.

CrystEngCommVol. 27(26)

Nagoya University (JP)

Openalex Percentile: Top 12%

Silicon and Solar Cell Technologies

2.19

DOI Open Access PDF OpenAlex

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Dynamic deformation modeling for the interfaces of growth, etching, and deposition under switching flow in TSSG-SiC growth — Shunta Harada, Xinjun Liu, et al. · CrystEngComm (2025) | TGRS Research Map | TGRS