A Study of the effect of eigenvalues on the Moore Gibson Thompson model under photoacoustic excitation of semiconductors

Regarding this investigation, the Moore-Gibson-Thompson (MGT) model was developed with the impact of acoustic pressure. This research's light is spotted on semiconductor material undergoing thermo-acoustic and optical deformation in the context of a theory of photo-thermoelasticity (PTE). The governing equations are formulated using a modified photo-excitation model, where (MGT) equation represents the heat conduction during processes of optical transport. This model represents the coupling between plasma, thermal, mechanical-elastic, and acoustic wave propagation. Analytical solutions for the main physical quantities are obtained utilizing the Laplace transform method combined with the vector-matrix differential equation method. Boundary conditions for the acoustic, plasma, and thermo-mechanical effects are applied at the outer surface of the medium. Numerical inversion of Laplace transforms is performed to obtain complete space-time solutions for primary fields. Silicon is utilized as a representative semiconductor material for numerical computations, with the results presented graphically and discussed with various influencing parameters. This study is significant because it provides a novel way to analyze the behavior of semiconducting materials under photo-acoustic excitation, applying the eigenvalue approach to a system previously modeled using simple methods. It fills existing gaps in the literature related to the application of the MGT model in semiconducting photo-acoustics and provides more detailed and reliable predictions for real-world applications.