Control of iron doping during the growth of bulk gallium oxide crystals by the Czochralski method
In this work, bulk β-Ga2O3 crystals were grown by the Czochralski method and doped with iron with different amounts of dopants. The dependence of the crystalline quality on the Fe content was studied. Measurements of the specific resistance and optical transmission spectra confirmed the compensation of donors, the binding of conduction electrons, and the growth of the specific resistance with an increase in the iron content in the crystals up to 1.6 × 1011 Ω cm. The obtained value of the activation energy of the deep level of Fe was EA = 0.66 eV.
Authors
- А. Е. Романов (ORCID: https://orcid.org/0000-0003-3738-408X)
- B. Ya. Ber (ORCID: https://orcid.org/0000-0003-2934-4176)
- P. V. Bogdanov (ORCID: https://orcid.org/0009-0000-1363-2451)
- W. V. Lundin (ORCID: https://orcid.org/0000-0002-0852-9561)
- D.I. Panov (ORCID: https://orcid.org/0000-0001-8715-9505)
- P. N. Brunkov (ORCID: https://orcid.org/0000-0002-3400-4654)
- A. F. Tsatsul’nikov (ORCID: https://orcid.org/0000-0002-5078-8946)
- D. Yu. Kazantsev (ORCID: https://orcid.org/0000-0003-2173-1278)
- E. Yu. Lundina
- V. A. Spiridonov (ORCID: https://orcid.org/0000-0001-5751-8597)
- D. A. Bauman (ORCID: https://orcid.org/0000-0002-5762-5920)
- A.Yu. Ivanov (ORCID: https://orcid.org/0000-0003-0737-9079)
- M. V. Tokarev (ORCID: https://orcid.org/0009-0004-3309-1735)
- S. S. Rachkov
Institutions
- ITMO University (RU)
- Submicron Heterostructures for Microelectronics Research and Engineering Center (RU)
- Ioffe Institute (RU)
Publication Details
- Journal
- Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
- Published
- 2025-05-27
- DOI
- https://doi.org/10.1116/6.0004535
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Russian Science Foundation