Recent Advances in Nitride‐Based Micro‐LEDs for Next‐Generation Display
Abstract Nitride‐based Micro‐light‐emitting diode (Micro‐LED) is now spreading into the field of display technology, which has been dominated by liquid crystal display (LCD), and organic LED (OLED). While high‐power LEDs for solid‐state lighting have been matured for many years, Micro‐LEDs present significant challenges in manufacturing and characterization. This paper explores recent developments in Micro‐LED display, providing an overview of current technologies and future possibilities in this field. This review focuses on the key technologies involved in manufacturing Micro‐LEDs, including epitaxy and chip processing, mass transfer, driving, bonding, and detection technologies. It further summarizes the emerging applications of Micro‐LEDs in full‐color displays, flexible displays, augmented reality (AR), and virtual reality displays (VR).
Authors
- Minhua Li (ORCID: https://orcid.org/0000-0003-1366-8774)
- Siyuan Cui (ORCID: https://orcid.org/0000-0002-0416-9765)
- Jiahao Song (ORCID: https://orcid.org/0000-0001-6296-1905)
- Shengjun Zhou (ORCID: https://orcid.org/0000-0002-9004-049X)
- Jingjing Jiang (ORCID: https://orcid.org/0000-0002-6776-1475)
- Sheng Liu (ORCID: https://orcid.org/0000-0003-1720-5689)
- Ke Sun (ORCID: https://orcid.org/0000-0003-4273-4638)
- Qianxi Zhou
- Lingtao Meng (ORCID: https://orcid.org/0009-0002-5830-5635)
- Kuosheng Wen
Institutions
- Wuhan University (CN)
Publication Details
- Journal
- Advanced Physics Research
- Published
- 2025-04-22
- DOI
- https://doi.org/10.1002/apxr.202400190
- Citations
- 6
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 7.55
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China