Formation of Polar Topological Domains in Wrinkled Bulges in Freestanding BiFeO <sub>3</sub> Thin Films

Abstract This work presents a voltage‐free strategy for creating and manipulating topological domains in freestanding BiFeO 3 films via the flexoelectric effect. By introducing bulge‐like surface wrinkles into freestanding films, complexed polarization topological textures can be formed, i.e., center‐type domain state with a cylinder bubble domain pattern along the vertical direction. This can be interpreted by the flexoelectric effect arising from the bulge topology, as verified by the phase‐field simulation results. The observed center topological texture can also allow reversible switching between the center divergent state and the mosaic‐like state driven by applying an electric field. The results provide a good example for the construction of topological domains via flexoelectric engineering, and offer opportunities for on‐demand design of polar topological structures for certain nanoelectronics applications.

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Publication Details

Journal
Advanced Functional Materials
Published
2025-04-21
DOI
https://doi.org/10.1002/adfm.202416311
Citations
2
Primary Topic
Advanced Materials and Mechanics
Type
article
Field-Weighted Citation Impact
1.43

Funders

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article

Formation of Polar Topological Domains in Wrinkled Bulges in Freestanding BiFeO 3 Thin Films

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2 citations
Advanced Functional Materials
Advanced Materials and Mechanics
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article

Formation of Polar Topological Domains in Wrinkled Bulges in Freestanding BiFeO 3 Thin Films

Zhen Hong Fan, Jun‐Ming Liu, Minghui Qin, Xingsen Gao, Jiyan Dai, Chao Chen, Jie Wang, Guo Tian, Jianbiao Xian, Z. Mo, Sizheng Zheng
article en
2 citations

Abstract

Abstract This work presents a voltage‐free strategy for creating and manipulating topological domains in freestanding BiFeO 3 films via the flexoelectric effect. By introducing bulge‐like surface wrinkles into freestanding films, complexed polarization topological textures can be formed, i.e., center‐type domain state with a cylinder bubble domain pattern along the vertical direction. This can be interpreted by the flexoelectric effect arising from the bulge topology, as verified by the phase‐field simulation results. The observed center topological texture can also allow reversible switching between the center divergent state and the mosaic‐like state driven by applying an electric field. The results provide a good example for the construction of topological domains via flexoelectric engineering, and offer opportunities for on‐demand design of polar topological structures for certain nanoelectronics applications.

Advanced Functional MaterialsVol. 35(36)
Hong Kong Polytechnic University (HK), South China Normal University (CN), Zhejiang Lab (CN), Collaborative Innovation Center of Advanced Microstructures (CN), Zhejiang University (CN), Nanjing University (CN)
National Natural Science Foundation of China, Basic and Applied Basic Research Foundation of Guangdong Province
Openalex Percentile: Top 20%
Advanced Materials and Mechanics
1.43
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